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PD - 9.1533A
l l l l l l l
Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated
HEXFET(R) Power MOSFET
D
IRFR/U5410
VDSS = -100V RDS(on) = 0.205W
G S
ID = -13A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-13 -8.2 -52 66 0.53 20 194 -8.4 6.3 -5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RqJC RqJA RqJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.

Max.
1.9 50 110
Units
C/W
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5/3/99
IRFR/U5410
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 -2.0 3.2 Typ. -0.12 15 58 45 46 4.5 7.5 760 260 170 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1.0mA 0.205 W VGS = -10V, I D = -7.8A -4.0 V VDS = VGS, ID = -250A S VDS = -50V, ID = -7.8A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 58 ID = -8.4A 8.3 nC VDS = -80V 32 VGS = -10V, See Fig. 6 and 13 VDD = 50V ID = -8.4A ns RG = 9.1W RD =6.2W, See Fig. 10 D Between lead, 6mm (0.25in.) nH G from package and center of die contact S VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -13 showing the A G integral reverse -52 p-n junction diode. S -1.6 V TJ = 25C, IS = -7.8A, VGS = 0V 130 190 ns TJ = 25C, IF = -8.4A 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 6.4mH RG = 25W, IAS = -7.8A. (See Figure 12) ISD -7.8A, di/dt 200A/s, VDD V(BR)DSS, TJ 150C
Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Uses IRF9530N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U5410
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
1
-4.5V
0.1
1
-4.5V
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-I D , Drain-to-Source Current (A)
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -14A
2.0
10
TJ = 150 C
1.5
1.0
1
0.5
0.1 4 5 6 7
V DS = 10V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U5410
2000
1600
-VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + Cgd , Cds SHORTED C rss = C gd C oss = Cds + C gd
20
ID = -8.4A
VDS =-80V VDS =-50V VDS =-20V
C, Capacitance (pF)
15
1200
Ciss
10
800
Coss
Crss
5
400
0 1 10 100
A
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
TJ = 150 C
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
-ID , Drain Current (A) I
100 10us
TJ = 25 C
1
10
100us
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 150 C Single Pulse
10
1ms
10ms 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U5410
15
VDS VGS
RD
12
-ID , Drain Current (A)
9
-10V
Pulse Width 1 s Duty Factor 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
td(on) tr t d(off) tf
VGS
0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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+
-
RG
D.U.T. VDD
5
IRFR/U5410
VDS
L
500
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
-V V DD + DD
A DRIVER
400
ID -3.5A -4.9A BOTTOM -7.8A TOP
-20V
tp
0.01
300
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( C)
tp V(BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFR/U5410
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
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IRFR/U5410
Package Outline
TO-252AA Outline Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
-B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
0.58 (.023) 0.46 (.018)
2.28 (.090) 4.57 (.180)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P
INTERNATIONAL RECTIFIER LOGO
A
IRFR 120 9U 1P
FIRST PORTION OF PART NUMBER
ASSEMBLY LOT CODE
SECOND PORTION OF PART NUMBER
8
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IRFR/U5410
Package Outline
TO-251AA Outline Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
3X
1.14 (.045) 0.76 (.030)
3X
0.89 (.035) 0.64 (.025) M AMB
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
2.28 (.090) 2X
0.25 (.010)
Part Marking Information
TO-251AA (I-Pak)
EXAMPLE : THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 9U1P
INTERNATIONAL RECTIFIER LOGO
IRFU 120 9U 1P
FIRST PORTION OF PART NUMBER
ASSEMBLY LOT CODE
SECOND PORTION OF PART NUMBER
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9
IRFR/U5410
Tape & Reel Information
TO-252AA
TR
TRR
TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/98
10
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